Session Index

Solid State Lighting

Solid State Lighting IV
Friday, Dec. 3, 2021  13:00-14:30
Presider: 黃柏仁/洪瑞華
Room: 303c
13:00 - 13:15 Award Candidate (Paper Competition)
Manuscript ID.  0051
Paper No.  2021-FRI-S0804-O001
Dai-Jie Lin Dynamic Behaviors of Dual-gate AlGaN/GaN HEMTs on Si
Dai-Jie Lin;Jhih-Yuan Yang;Chih-Kang Chang;Jian-Jang Huang

Here we present a dual-gate transistor structure to suppress the dynamic on-resistance increase. The auxiliary gate under a proper fixed voltage is able to induce additional electrons to compensate the channel carrier loss during main gate switching, leading to a lower dynamic on resistance. In this work, we benchmarked the fundamental electrical properties of both single-gate and dual-gate HEMTs. We further extracted the dynamic behaviors by stressing the devices with short pulses. The results suggest a significant improvement of dynamic behaviors of a dual-gate HEMT under a proper bias applied on the auxiliary gate electrode.

  Preview abstract
13:15 - 13:30 Award Candidate (Paper Competition)
Manuscript ID.  0406
Paper No.  2021-FRI-S0804-O002
Shih-Min Chen Development of 2D Simulation Model for Vpit and Random Alloy Fluctuation Simulation in Blue and Green LEDs
Cheng-Han Ho;Shih-Min Chen;Yuh-Renn Wu

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltages (Vf) are higher due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well (QW) and quantum barrier interfaces. As we know, the turn-on voltages for blue and green LED are both affected by random alloy fluctuation and V-defect density. In our model, we find that the Vf of the green LEDs is reduced significantly by V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection.

13:30 - 13:45 Award Candidate (Paper Competition)
Manuscript ID.  0437
Paper No.  2021-FRI-S0804-O003
Xiu-Yu Chen Enhanced light extraction of UVC Light-Emitting Diode with Pattern Porous-AlGaN layer
Xiu-Yu Chen;Chia-Feng Lin

AlGaN-based UVC-LED structure has electrochemical (EC) treated porous AlGaN layer. The photoluminescence peak wavelength has a slightly blueshift phenomenon from non-treated LED (274.1nm) to EC-LED (272.4nm) due to the partial strain release in the active layer with embedded porous layer. In electroluminescence (EL) emission spectrum, the intensity for the AlGaN active layer (~270nm) was increased. By forming the conductive porous-AlGaN:Si layer, the EL emission intensity of the EC-LED has 20% enhancement compared to non-treated LED. High light extraction effect of the UVC-LED with porous-AlGaN layer has been studied for the high efficiency UVC-LED applications.

13:45 - 14:00 Award Candidate (Paper Competition)
Manuscript ID.  0177
Paper No.  2021-FRI-S0804-O004
Jing-Teng Shi Investigation of Molybdenum Oxide Hole Injection Layers for Green Quantum Dot Light-Emitting Diodes
Jing-Teng Shi;Hsin-Chieh Yu;Kuei-Hung Chu;Qian-Hua Zhuo

In this study, green quantum dot light-emitting diodes (QLEDs) comprised of inorganic/organic hybrid hole injection/transport layers with solution-process was reported. Molybdenum oxide (MoOx) was used as hole injection layer (HIL), Poly-TPD as hole transport layer (HTL) and magnesium doped zinc oxide nanoparticles (Mg0.1Zn0.9O NPs) served as electron transport layer (ETL) prepared by synthesis nanoparticles method were demonstrated. The maximum luminance (Lmax) of the fabricated QLEDs can be up to 138,612 cd/m2 with current efficiency of about 6.72 cd/A.

14:00 - 14:15 Award Candidate (Paper Competition)
Manuscript ID.  0405
Paper No.  2021-FRI-S0804-O005
Yu-Chieh Chang Analysis of TM polarization ratio in UVC-LEDs with 3D k·p method by considering random alloy fluctuation
Huan-Ting Shen;Yu-Chieh Chang;Yuh-Renn Wu

For nitride-based AlGaN LEDs, the potential fluctuations caused by alloy disorder may relax the compressive strain in the lower Al (higher Ga) composition sites. In this paper, the k·p method combined with 3D-DDCC solver is used to study the polarization ratio changes due to the random alloy fluctuation and different Al composition in the buffer layer. When the TM polarization ratio is higher, increasing the Al composition of the buffer layer from 60% to 100%, the polarization ratio decreases from 0.33 to -0.57 due to the increased compressive strain.

14:15 - 14:30 Award Candidate (Paper Competition)
Manuscript ID.  0198
Paper No.  2021-FRI-S0804-O006
Fang Zhong Lin Thermal Characteristics of Diamond Powder Mix with Colloidal Quantum Dot LEDs Package
Fang Zhong Lin;Chung Ping Huang;GUAN TENG LIN;Jhen Jia Yang;Yu Ming Huang;Chien Chung Lin

In order to achieve a better heat dissipation, diamond powder is added into the QDLED package. The results show that the maximum temperature and surface areal temperature can be reduced, but the optical performance will be impacted when mixed with diamond.