Session Index

Photovoltaic Technology

Photovoltaic Technology III
Friday, Dec. 3, 2021  10:45-12:00
Presider: Prof. Chao-Yu Chen National Cheng Kung University, Taiwan, Dr. Yong-Liang Tong Industrial Technology Research Institute, Taiwan ,
Room: 303d
10:45 - 11:15
Manuscript ID.  0737
Paper No.  2021-FRI-S0903-I001
Invited Speaker:
Tsutomu Miyasaka
Interfacial and compositional engineering for high-voltage perovskite solar cells
Tsutomu Miyasaka

11:15 - 11:30 Award Candidate (Paper Competition) Award Candidate (Applied Optoelectronics Competition)
Manuscript ID.  0191
Paper No.  2021-FRI-S0903-O001
Adzilah Shahna Rosyadi The Formation of p and n-type Multilayer Chromium doped ReSe2 Homojunction
Adzilah Shahna Rosyadi;Ching-Hwa Ho

Doping chromium inside ReSe2, creates different carrier types of crystals, p-type (Cr10% and 20%) and n-type (Cr0%, 1%, and 5%) multilayer ReSe2. The band level predicted by temperature-dependent resistivity infers that Cr3+ (p-type) is trapped in the shallow level while Cr6+ is found in the deep level carrying n-type donor. The p-n diode, for the first time, is constructed by stacking multilayer of ReSe2 (n-type) and ReSe2: Cr 20% (p-type) in the microscale layer. Under illumination, E//b-axis polarization photovoltaic cell response exhibits the highest energy conversion efficiency and promisingly contributes to solar cell devices in 2D semiconductor.

11:30 - 11:45 Award Candidate (Paper Competition)
Manuscript ID.  0201
Paper No.  2021-FRI-S0903-O002
Ting-Chun Chang Investigation of Perovskite Solar Cells with PC61BM Electron Transport Layer and ZnO Interface Layer.
Ting-Chun Chang;Chen-Yi Liao;Guan-Syun Chen;Chia-Hsun Chen;Ching-Ting Lee;Hsin-Ying Lee

In this work, zinc oxide (ZnO) films were deposited on PC61BM electron transport layer by thermal evaporator as an interface layer for perovskite solar cells. Using ZnO films could reduce the defects on PC61BM surface and make more matching energy level which could improve the performance of perovskite solar cells.

11:45 - 12:00 Award Candidate (Paper Competition)
Manuscript ID.  0560
Paper No.  2021-FRI-S0903-O003
Bo-Xun Ke Performance Enhancement of InGaP/GaAs/Ge Solar Cell Using Plasmonic Anti-Reflective Light-Modulation
Bo-Xun Ke;Wen-Jeng Ho;Jheng-Jie Liu;Jia-Chen Zhuang

In this study, the efficiency enhancement of InGaP/GaAs/Ge solar cell was demonstrated using an TiO2/Al2O3 double-layer anti-reflection coating with (and without) various diameters of indium nanoparticles (In-NPs) embedded in TiO2 layer. The best increasing in efficiency of 17.06% was obtained by using the In-NPs of 23 nm in diameter.