Session Index

Membrane-type InGaN micro light-emitting diode with a bottom porous-AlGaN DBR structure has been separated from the sapphire substrate through a chemical lift-off process. The n+-AlGaN:Si/n-AlGaN:Si stack structure has been transformed into the porous-AlGaN/n-AlGaN distributed Bragg reflectors (DBRs) through an electrochemically etching process. The electroluminescence property was observed in the conductive InGaN light-emitting membrane on ITO/glass substrate by using the vertical current injection process.

 

Fabrication of H2S gas sensor on flexible substrates using conventional metal-oxides annealed at over 300oC temperature is not feasible. Here, we have demonstrated SnO2 based NIR- annealed ultra-sensitive H2S gas sensor on food plastic wrap at lower than 50oC as revealed by the thermal imager. The SnO2 film was deposited on plastic wrap by sol-gel process and subsequently annealed by NIR laser (20W/cm2) for 60 seconds. The sensor exhibited the detection limit of H2S gas up to 100 ppb. The NIR power controls the metal-oxide bonds which influence the response of the sensor as suggested by X-ray photoelectron spectroscopy.

 

MoS2 with the superior properties has been extensively investigated as a next generation semiconductor channel material to electronic and optoelectronic devices. We applied the CVD method at argon flow 10 sccm and vulcanization temperature 800 °C to grow MoS2 films. Raman and photoluminescence spectroscopy have confirmed the MoS2 films were trilayer to monolayer.

 

The operational current of an F4-TCNQ doped PTB7 ammonia gas was greatly increased compared with the non-doped PTB7 gas sensor. To understand the mechanism behind the difference of operational current between the two devices, we used space-charge-limited current (SCLC) analysis and UPS measurement to investigate the effects of doping on carrier mobility and the highest occupied molecular orbitals (HOMOs) levels.

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A method for improving the accuracy of stopping criteria for the broadband optical monitoring for drum-based plasma-assisted reactive magnetron sputtering is proposed. The method used slope of merit function as criteria for terminating deposition to control layer thickness. A five-layer anti-reflection coating was used to verify the proposed method in broadband optical monitoring system.

 

In this work, the films for fabricating Ga2O3-based metal-semiconductor-metal ultraviolet photodetectors were deposited by vapor cooling condensation system. Under bias of 5 V and wavelength of 250 nm, photocurrent, responsivity and detectivity of Ga2O3 MSM-PDs in parallel structure were 2.10 nA, 0.16 A/W and 7.5 × 1011 cmHz0.5W-1, respectively.

 

In this work, we report our implementation of high speed THz spatial light modulator using organic semiconductor. The material is fabricated by modifying a well-known photocatalyst material, graphitic carbon nitride (g-C3N4). We conducted characterization on the modulation depth, carrier lifetime of the sample. From the results, maximum modulation depth of 27.13±0.12% in time domain and 24.55 ± 0.031% is observed, while the carrier lifetime is determined as 4.527 ± 0.178 ns. The results suggest more than 10 folds enhancement compared to gallium arsenide (GaAs), indicating the promising potential of applying modified (g-C3N4) as THz SLMs.

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Mie scattering and three-dimensional finite-difference time-domain (3D-FDTD) are used to simulate the electromagnetic fields inside and around particles of granular material and to investigate their thermal radiation absorption effects. A comprehensive study of the mass absorption cross-section thermal radiation hindering effect of the main particulate matter is presented.

 

Inverted staggered bottom-gate p-type SnO TFTs were fabricated on glass substrates. The contact resistance and transport mechanism were investigated by the transmission line method (TLM) and temperature-dependent I-V measurement. Gate voltage (VGS)-dependent contact resistances and Arrhenius temperature-dependent drain currents were observed in the ON state, indicating that the hole transport mechanism in SnO TFTs was dominated by the “trap-limit band conduction.”

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The subwavelength VO2 nanocone array could yield the ultrahigh Tlum due to the graded refractive index and the excellent ΔTsol resulting from the localized surface plasmon resonance effect. The effects of d/D ratio, height and porosity of nanocone array on thermochromic performances were theoretically investigated. The single-layered VO2 nanocone array exhibits the ultrahigh Tlum of 93.3% with the excellent ΔTsol of 6.1%, and the remarkable thermochromic performances of ΔTsol = 19% and Tlum = 69.5% could be obtained with the increasing layer number.

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Following similar growth procedures, a second graphene layer can be grown on the graphene/sapphire sample surfaces. A similar D/G peak ratio with the first graphene layer suggests that similar crystallinity may be obtained for the second graphene layer. After fabricating the graphene films into bottom-gate transistors, enhanced field-effect mobility values are observed for the device with two graphene growth cycles. The results indicate that although similar crystallinity is obtained for the second graphene layer, the second graphene growth cycle may help to heal the first graphene layer such that higher field-effect mobility value will be observed for the graphene transistor.

 

The graded-index-like film with shadow-mask was used to design linear variable filter. A program was written to model and simulate the relative thickness of the AlN and SiO2 films influenced by different target-substrate distance. Moreover, optimization of shadow-masks for AlN and SiO2 films to achieve spatial variation in notch‐band center wavelength across the substrate surface.

 

We reported a multi-reflection bands film which is generated by stacking single-pitched photo-polymerized cholesteric liquid crystal films. The reflection bands position can be controlled by changing the ratio of liquid crystals and solvent.

 

EC-treated porous-AlGaN/GaN stack structure has been demonstrated as the photo-detector with multiples 2DEG channels. The PL emission intensity of the EC-PD was higher than the ST-PD at 345nm. The Al content of the AlGaN epitaxial layers in PD structure were analyzed through the photoluminescence measurement. The photo-current of the EC-PD was higher than the non-treated PD structure at 335nm monochromatic light. The EC-PD structure with multiple AlGaN/GaN channels had been demonstrated which have potential for the high efficiency UV detector applications.

 

In this study, the various thickness of Ga-doped ZnO (GZO) film had been deposited on PC substrate, the microstructures and loading test were analyzed to obtain the optimal sensing film for future application in touch sensors.

 

Most gas sensors like catalytic gas sensors and semiconductor gas sensors need a heater to provide appropriate temperature for gas sensing. Metal oxide semiconductors have been used in gas sensing widely. Since most electronic gas sensors must operate at a working point of 300oC or above, integrating a micro heater into the sensor is a subject that has to be studied. ZnO doped Ga based thin film apply to gas sensors and how to design and optimize the integration of the micro heater into the gas sensor is investigated in this study.

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In this paper, the pulsed magnetron sputtering was applied with low temperature and low cost to deposit gallium nitride films on sapphire substrate for large area fabrication. Finally, a single crystal GaN film has been deposited by stacking 2D/3D structure with good surface roughness.

 

Indium tin oxide is an n-type wide-bandgap semiconductor with good transmittance and resistivity. In our experiment, we set 3 pieces of ITO at same condition such as voltage, procedure. Moreover, we will discuss the difference of temperature raise for 3 kinds of electrodes. We will measure each transmittance by UV and resistance by Four Point Probe Sheet Resistance Meter before our experiment.

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In this article, we report the effect of gas flow on growth inorganic perovskites film by low pressure chemical vapor deposition system (LPCVD). The thickness of the film increased with gas flow. The film quality was also affected by gas flow, which influence the optical and electric properties.

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In this report, we have investigated the optical characteristics of mono-layer MoS2/mono-layer WSe2 hetero-structures with different stacking sequences. With the wafer-scale MoS2 fully covered the WSe2 flakes, a type-II band alignment of the MoS2/WSe2 hetero-structure will result in a reduced PL for both MoS2 and WSe2 luminescence. However, when WSe2 flakes are transferred to MoS2 surfaces, despite the same weakened MoS2 luminescence, a significant WSe2 luminescence enhancement will be observed. The phenomenon is attributed to the partial detachment of WSe2 flakes on MoS2 surfaces.

 

Here we demonstrate high response of poly(3-hexylthiophene) based ammonia gas
sensor fabricated on AAO membrane with laser patterned customized interdigitated silver
electrodes. The proposed sensor exhibits limit of detection up to 1 ppm and remarkably high
response compared to the one fabricated on glass substrate. The wavelength dependent response
of this organic semiconducting molecule to ammonia gas has been investigated thoroughly.

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In this study, we focus on the fabrication and packaging of quantum dots on micro Light-Emitting Diode array, proposing two experiments to improve the performance, and design one structure to reduce the coffee ring caused by spin coating process.

 

A 7T1C AMOLED pixel circuit is proposed to solve the problems of VTH variations and leakage current. Simulation results show the successful detection of ±0.5 V VTH variations. Furthermore, the leakage current at the gate node of driving TFTs is also alleviated.

 

Polycrystalline-silicon thin-film transistors (poly-Si TFTs) were successfully manufactured with low metal contamination Ni-induced lateral crystallization (LC-NILC) and p-type poly-Si channel. The relative low power consumption and thermal budget with capability of integrating in pixels, going to meet the requirement of idea of system on panel (SoP).

 

In this study, the electrical characteristics of InWZnO based conductive bridge random access memory (CBRAM) with single and bilayer structure under low compliance current (10-5 A) are systematically investigated. However, the endurance test of bilayer IWZO CBRAM device are extracted by cycling I-V curve. The bilayer CBRAM device with insertion layer of TiOx has the best performance for endurance test. Finally, the retention property of bilayer CBRAM device can be maintained the high resistance state and low resistance over 104 s, which paved the potential way for low power applications.

 

Vanadium pentoxide (V2O5) is used as auxiliary color change layer for a complementary ITO/WO3/(LiClO4+PC)+PMMA/V2O5/ITO all-solid-state electrochromic devices. The deposited parameters of V2O5 film include the argon flow is 20 sccm, oxygen flow change from 2 to 8 sccm. However, the transmittance variation (△T) can reach 48.8% @ 500nm.

 

Copper oxide heterojunction photocathodes for photoelectrochemical water splitting were fabricated using the sol-gel thin-film deposition and electrodeposition methods. Bilayered CuO/Cu2O photocathodes exhibit a higher photoactivity than CuO and Cu2O due to excellent electron-hole separation and a faster charge transportation rate.

 

In this work, we process the reactive sputtering deposition for SnO film fabrication, and adjust different ratio of O2/Ar in sputtering process and annealing temperature. 5%-SnO
18 -3 5 2 film reaches carrier concentration of 8.51 x10 cm , and sheet resistance of 1.07 x10 Ω/cm ,
respectively.

 

Nano-structured CuO-based heterojunction photoelectrodes for photoelectrochemical water splitting were fabricated by using the sol-gel thin-film deposition method. Graphitic carbon nitride (g-C3N4) quantum dots and high-entropy ABO3-type perovskite nanoparticles were successfully synthesized for fabricating heterojunction photoelectrodes on CuO.

 

In this study, metal-semiconductor-metal(MSM) deep ultraviolet photodetectors (DUVPDS) based on ZnGa2O4 (ZGO) is fabricated, ZGO thin film is prepared by metal organic chemical vapor deposition (MOCVD).The effect of UV-ozone treatment on the characteristic of DUVPDS is reported. It shows better performance than the device without UV-ozone treatment.

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A feasible and effective post-treatment method is presented to improve the quality of MAPbI3 films by using bulky alkylammonium cations (Phenethylammonium iodide (PEAI) and N-butylammonium iodide (BAI)). To the perovskite LEDs, it enhances the electroluminescence properties, and decreases the turn-on voltage. Ultimately, the electroluminescence intensity of 3.07 uW is achieved with BAI post-treatment. It represents a 38% compared to the best control cell. Moreover, the whole post-treatment process is simple and cheap, which only requires of 1 mg/mL PEAI or BAI solution in isopropanol. It is beneficial to control the reaction rate by changing the volume of the solution.

 

The antireflection coating was prepared by the plasma-assisted reactive magnetron sputtering system and the shadow-mask designed by the simulation program. The specification of the reflectance in 420 nm to 680 nm was less than 1%, and the highest reflectance did not exceed 1.5%. Verify that a large-area uniform film could be obtained through the shadow-mask designed by the simulation program.

 

In this study, the intermittent process is used to enhance the optoelectronic properties of ultra thin Zinc Oxide (ZnO) film, which will be used as transparent conductive electrode to apply on light-emitting diode.

 

In this work, we investigate the performance of methylammonium lead iodide (MAPbI3) based perovskite LEDs with LiQ as Interlayer. We found that inserting an ultrathin Lithium-Quinolate (LiQ) interlayer between the EML and ETL shows enhancement performance of external quantum efficiency (EQE) Compared to the control device without LiQ. LiQ could restrains severe photoluminescence (PL) quenching at the perovskite/ETL interface and effectively block excess electrons. A high optical output power of 856.83 μW and external quantum efficiency of 4.8 % are achieved, which represents a 2.7 times enhancement in the quantum efficiency compared to device without LiQ interlayer.

 

This study is about finding appropriate environment for making ZTO TFTs. We deposited and analyzed the ZTO membrane at first through transmittance, Hall Effect, Micro-PL Spectrometer and XRD. Afterwards, we deposited HFO2 as insulating layer and ZTO as channel layer in different oxygen flow by RF sputtering system. At the top of TFT, we deposited 70nm Al as gate layer. Finally, concluded that when Ar:O2 is 45:5 was the better condition for manufacturing.

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The sol-gel thin-film approach using spin coating was applied to prepare high-performance CuO-based supercapacitor materials. Four different doped CuO thin films with a metal cation (Ni, Co, Fe, or La) were effectively fabricated, boosting the supercapacitor performance compared to CuO.

 

The ZrO2/SiO2 and TiO2/SiO2 multi-layers deposited on PET substrate with ion-assisted E-gun deposition. The optical and residual stress were investigated by spectra and shadow moiré interferometer. However, the residual stress could reduce to -297.3MPa and -132.6MPa.

 

The external electric field can be used to change the refractive index of LiNbO3, thereby forming an optical phased array structure for three-dimensional scanning. With the change of refractive index, the strong light coupled out of the LiNbO3 waveguide has a deflection angle of 2 degrees.

 

In this study, the different sputtering powers is used to deposit ZnO thin, which will be applied on CO gas sensor. The absorption rate and gas sensing sensitivity are measured, the optimal thin film is deposited on 200W power.

 

Development and verification of a high quality silver coating on remote sensing telescope mirrors is demonstrated in this study. The optical coating has been implemented optical spectrum measurement and cross-cut adhesion test. The environmental test, including high temperature & humidity, thermal cycling, and radiation tests are also performed to verify the validation of this component. According to this qualification model (QM) development experience, the manufacturing of a space-qualified flight model (FM) mirror coating is expected for the future missions.

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In this study, we propose a method based on liquid crystal/polymer phase separation and localized photopolymerization to realize a superhydrophobic surface with spatially controlled adhesion characterized by lotus and petal effects. The proposed strategy has the potential to manipulate the flow of a droplet and realizes a droplet deflector.

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In this work, a small amount of silver was obliquely deposited on a dielectric subwavelength grating to form an ultra-thin metamaterial layer with morphology dependent permittivity and permeability. The anomalous TM reflection peak was induced and sensitively shifted by varying the deposition parameters.

 

It is attracting industry research interest for the developing of an adaptable UV photo detector for life care and safety applications. Photo-detection can be achieved by Al/TiO2/Si MIS device at reverse bias. Here, we demonstrate a Si-based MIS photo-detector of high contrast UV range photo detection.

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This study deposited various thickness of ZnO thin film, the electrical properties and loading test had been done, which will be applied to pulse wave sensing.

 

The electrical characteristics of IGZO have been improved by two method in this research, the process temperature and effect of Ti doping in the IGZO films. Hall measurement was used to measure the electrical properties. The higher process temperature provided more energy to reduce the defects and increased the carrier mobility in the films. The effect of the different Ti doping can be analyzed by replaced cation In as cation Ti. The carrier concentration and the carrier mobility were all increased.

 

The Ag3PO4-Na2SiO3 hybrid composites were deposited by spray pyrolysis with different Ag/P atomic ratios in the precursor. The photocatalytic properties of the films and sheet resistance between repeated runs were characterized. The film with Ag/P=3 shows low resistance, high photocatalytic ability and stability. The resistance effects were discussed.

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In this study, the hydrothermal growth method was used to prepare TiO2 for glucose sensor because of its many advantages such as high reactivity, low cost fabrication, low energy requirement, and easy processing. By changing the annealing temperature of TiO2, the best parameters were found to achieve high sensitivity.

 

This study adopts simple, fast, and low-cost ultrasonic spray pyrolysis to fabricate titanium dioxide thin films on silicon substrates, annealing the films at different pressures and gases, observing the crystal structure by X-ray diffraction (XRD), then calculating the degradation efficiency of methylene blue with the spectrometer.Tio₂ thin films were prepared by USP, then annealed in different gases at temperature of 500°C for one hour. The photocatalytic degradation of methylene blue revealed that an annealing time of one hour in vacuum has the best degradation rate and annealing in ammonia has better degradation rate than nitrogen.

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This article presents the effectiveness of optimizing multiple quality characteristics via Taguchi method and BPNN (Back propagation neural network), and has been successfully applied to optimize the PECVD thin film stress to reduce the flake defect. Optimizing process parameters: pressure, gas flow, and RF power to decrease the film stress and keep original level of multi-quality characteristics such as thickness, reflectivity, fluorine content, and uniformity.

 

In this paper, we demonstrated a new material (MgGa2O4) for being RRAM device with Al top electrode, the outstanding characteristics including endurance, retention time, ON/OFF current ratio conducted by series of experiments indicated this this material possessed potential fabricated as switching layers for resistive memory application.

 

In this work, a symmetrical film stack composed of TiN and SiO2 thin films is designed to achieve an edge filter that exhibits high reflection at infrared range and high absorption at visible range. Such filter can be applied as a thermophotovoltaic device.

 

The Pulse Flow Modulation Method (PFM) was used to improve the epitaxial quality of the Hydride Vapor Phase Epitaxy (HVPE), using sapphire substrate with a gallium nitride (GaN) buffer layer grows the β-phase gallium oxide (β-Ga2O3) film.
The best parameters of the gallium oxide epitaxy film are the gallium zone temperature of 600 °C, the deposition zone temperature of 900 °C, the growth pressure of 100 Torr, the HCl flow rate of 0.02 SLM, and the growth time of 180 min.The FWHM is 0.77∘, and the rate of growth was 1.375μm/hr.

 

In this study, the semiconductor ZnO tetrapod nanostructure was favourably used for designing the porous structure and accompany by plasmonic metal Ag nanoparticles to synthesis the hybridization of unique SERS (Surface Enhanced Raman Spectroscopy) chips on the ITO glass substrate (Ag@ZnO-ITO) via simple photo-irradiation induced deposition. This chip shows excellent SERS effect and has a significant signal performance to analyze the pesticide molecular of acetamiprid with very low concentration in water.

 

Hexagonal boron nitride (h-BN), a two-dimensional material, has a similar structure with graphene but including wide bandgap. In this study, h-BN films were grown on silicon substrates by using low-pressure chemical vapor deposition. The quality of the h-BN films is analyzed by controlling the gas flow and process time.

 

The optical properties, thickness, and water contact angle of surface and interface layers between the polyethylene terephthalate (PET) and sputtered Ta2O5 films were investigated with spectrophotometer, spectroscopic ellipsometer, and contact angle measurement system, respectively. The surface of PET had been treated with oxygen plasma.

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The effect of device characteristics of Cu2ZnSnSe4 thin films by using multi-metallic stacked structure is investigated. When the number of the stacked layer changes from 3 to 15, the surface of the film become uniform and full width at half maximum of CZTSe can be reduce from 0.27 to 0.2.

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In this report, we demonstrate high-sensitivity volatile organic gas sensors with nano-scale carbon black as the active material. The conductivity of carbon black changed under oxidizing and reducing gases and thus the sensitivity of the sensor changed with the concentration of the gas. The sensitivity of the sensor changed from 0.49% to 7.21% whiled the ethanol concentration changed from 100 ppm to 7000 ppm in room temperature.

 

The visible light absorptance, reflectance, and optical constants of Nb, Mo, and W films were investigated with a spectrophotometer and a spectroscopic ellipsometer, respectively, when the transmittance was controlled at about 3%. The absorption of Nb fim was the largest due to the smallest reflectance of the film.

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The transparent conducting oxide indium tin oxide (ITO) and ZnO:In hybrid composites were deposited on ITO by spray pyrolysis with controlled deposition time. With optical and electrical study, samples with high transmittance and low sheet resistance were achieved for films deposited with different deposition time. The origins were discussed.

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In this study, we first use electron beam evaporation to deposit a molybdenum film on a sapphire substrate, and use the direct vulcanization method to grow a single-layer molybdenum disulfide film in a high-temperature furnace tube. This research result can be a reference for growing molybdenum disulfide in a large area. We hope that this structure can be applied to various heterojunctions, sensors, solar cells, and thin-film transistors.

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In this study, PLD (Pulsed Laser Deposition) was used to prepare CuO film on a C-plane sapphire substrate. Its crystal structure and thin film properties were analyzed by X-ray diffractometer, Ultraviolet-visible spectroscopy. We study the effects of changing the copper oxide film, substrate temperature, background pressure, and gas flow during casting on the characteristics of the copper oxide photocatalyst film. Then put the sample into the methylene solution for degradation experiment, and use ultraviolet spectrophotometry to measure the degraded methylene blue solution to analyze its photocatalyst effect.

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In this paper, PLD (pulsed laser deposition) was used to prepare copper oxide nickle-doped film on C-face sapphire. Its crystal structure and thin film properties were analyzed by X-ray diffractometer, penetrating spectrometer and Hall measurement. By comparing the thickness of copper oxide grown under different doping concentrations, different environmental pressures and different temperature conditions, the most suitable concentration, the best environmental pressure and the most suitable temperature are selected in sequence.

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Indium oxide film was deposited by atomic layer deposition (ALD) in this study. Saturation curve of indium oxide is measured with the dosage of Trimethylindium (TMI) from 0.1 to 1 s. Growth rates of indium oxide measured by ellipsometer are 0.53 Å / cycle at 150 oC and 0.47 Å / cycle at 250 oC, respectively. The surface roughness of indium oxide is 1.924 nm measured by AFM. Indium oxide film with good thickness control and good conformality and thus its optical and electrical properties can be controlled.

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