Session Index

Nanophotonic Materials and Devices

Nanophotonic Materials and Devices VI
Saturday, Dec. 4, 2021  10:45-12:15
Presider: Prof. Jui-Yang, Feng (NKU)
Room: 302a
10:45 - 11:00
Manuscript ID.  0211
Paper No.  2021-SAT-S0106-O001
Coung-Ru Yan Device Performance Optimization of 2D Material Transistors Fabricated on Wafer-scale MoS2
Coung-Ru Yan;Po-Cheng Tsai;Shoou-Jinn Chang;Shih-Yen Lin

2D material transistors are fabricated on wafer-scale MoS2 films prepared by the two-stage growth procedure. RF sputtering and the ALD are adopted to deposit Mo precursor on sapphire substrates before sulfurization. The higher field-effect mobility value of the MoS2 transistor fabricated by using ALD reveals that a uniform precursor distribution will help to form MoS2 films with improved crystallinity. With improved crystallinity of contact electrodes grown at higher temperatures, enhanced device performances are observed. By using antimonene as the contact metal, high field-effect mobility 2.03 cm2/V·s and > 105 ON/OFF ratio is observed for the MoS2 transistor prepared by ALD.

11:00 - 11:15
Manuscript ID.  0291
Paper No.  2021-SAT-S0106-O002
Rong-Sheng Lin Small Pixel Pigment/meta hybrid IR cut filter
Chih-Ming Wang;Rong-Sheng Lin

An IR cut filter, consisting of metasurface embedded in pigment layer, is designed and fabricated. Via the absorption enhancement provided by the metasurface, the thickness of the pigment layer can be significantly reduced which benefits a small pixel CMOS image sensor.

11:15 - 11:30
Manuscript ID.  0607
Paper No.  2021-SAT-S0106-O003
Da-Jhong Lin OOK Transmission Using Silicon-Photonic Transmitter With Right-Arm MZM for Phase Shift
Da-Jhong Lin;Zih-Yuan Ciou;Kuo-Fang Chung;Shih-Chun Kao;Ding-Wei Huang;Gong-Ru Lin

Inputting an OOK can be used to increase the degree of change in the depletion region of silicon-MZM, increasing the modulation power from 0.4mW to 0.6mW, which can improve the clarity of signal transmission, thereby increasing the transmission frequency, and reducing the modulation bias from 3V to 2.6 V, can reduce power consumption.

11:30 - 11:45
Manuscript ID.  0638
Paper No.  2021-SAT-S0106-O004
SUROJIT CHATTOPADHYAY Nanohybrid Designs for Broadband and Fast Photodetectors

Hybrid material design is required to extract broader spectrum of performance in the field of optoelectronic devices, such as photodetectors (PD). We report hybrid PD based on two-dimensional (2D) graphene, and MoS2 in composite with 0D upconversion nanoparticles (UCNPs), and 1D AuNRs. The objective is to improve the poor broadband responsivity of the semiconductor based devices. Careful design of the PDs with high quality Graphene/MoS2, UCNPs (for NIR photoresponse), and AuNRs (for faster response times) yielded high Responsivity ~10^4 A/W (using Graphene/UCNPs PD), Detectivity ~ 10^15 Jones (using MoS2/UCNPs PDs), and a response time of 80 ms (using Graphene/UCNPs/AuNRs PDs).

11:45 - 12:00
Manuscript ID.  0676
Paper No.  2021-SAT-S0106-O005
Guan-Bo Lin Terahertz metalenses fabricated with photolithography
Guan-Bo Lin;You-Chia Chang;Tsung-Chieh Tseng;Yu-Hang Wang;Jian-Yu Wu;Peichen Yu;Shang-Hua Yang

We design and fabricate all-silicon, polarization-independent metalenses operating at 1 THz. The metalenses consist of 180-μm-tall pillars arranged in a hexagonal lattice. We engineer the phase profile by varying the pillar diameter. By using pillar diameter from 35 to 90μm, we obtain full 2π phase coverage. We perform full-wave 3D finite-difference time-domain simulation to obtain the focusing intensity distribution and demonstrate diffraction-limited performance. We fabricate the metalenses with photolithography and bosch plasma etching. The measured focusing efficiency of the fabricated metalens is 46.1 %.

12:00 - 12:15
Manuscript ID.  0711
Paper No.  2021-SAT-S0106-O006
Jeng Yi Lee Parity symmetry of reflection and optical pulling force in parity-time symmetric photonic systems
Jeng Yi Lee;Pai-Yen Chen

Based on the Lorentz reciprocity theorem, we propose a generalized parametric space for any parity-time (PT) symmetric photonics. With the general parametric space, we can indicate complete information on broken symmetric phases, exceptional point, and reflectance. Quite counter-intuitively, we find PT-symmetric photonics can support isotropic reflectance and optical pulling forces.

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