Session Index

Quantum Electronics and Laser Technology

Quantum Electronics and Laser Technology II
Thursday, Dec. 2, 2021  15:15-17:00
Presider: Prof. Yen-Hung Chen (陳彥宏)/Prof. Chao-Kuei Lee (李晁逵)
Room: 303a
Notes:
15:15 - 15:45
Manuscript ID.  0078
Paper No.  2021-THU-S0302-I001
Invited Speaker:
Frank Setzpfandt
Parametric frequency conversion in nanostructured lithium niobate
Frank Setzpfandt

Thin-film lithium niobate enables to combine the advantages of the lithium niobate material with nanoscale optical elements. Here, I will review our recent results in the realization of nanostructured lithium-niobate components for nonlinear frequency conversion. Special emphasis is on the use of these structures as sources of correlated photon-pairs.

  Preview abstract
 
15:45 - 16:00
Manuscript ID.  0053
Paper No.  2021-THU-S0302-O001
silvano donati 3-D Profilometry by Self-Mixing Interferometry
silvano donati

We show that the speckle phase error incurred when the laser spot is scanned over the diffusing surface can be made as low as 10..20-m for object sizes in the range 3..10-cm. This result is new, at the best of our knowledge, because it is usually assumed that when the spot moves of its size the phase becomes uncorrelated and the measurement can't be done anymore. We carry out numerical simulations of the process, and derive an analytical model to evaluate the phase error and the NED (noise equivalent displacement) of the profile measurement by SMI (self-mixing interferometer).

  Preview abstract
 
16:00 - 16:15
Manuscript ID.  0524
Paper No.  2021-THU-S0302-O002
Hossein Shirvani Near-infrared Free-electron laser on a Nano-chip
Hossein Shirvani;Luo Hao Peng;Wen Chi Chen;Yen Chieh Huang

We present the study of a near-infrared free-electron laser consisting of a 31-um long dielectric grating with a 310-nm grating period in a 400-nm thick silicon waveguide on a glass substrate. When driven by a ~50-keV electron flying 100 nm above the structure, the nano-grating generates a laser-like radiations at ~1.5 micron via Bragg and backward-wave resonances. This work paves the way to miniaturize a bulky free-electron laser to a chip-size device.

 
 
16:15 - 16:30
Manuscript ID.  0340
Paper No.  2021-THU-S0302-O003
Wan-Ping Chan DNA-driven nanocavities integrated with a few fluorophores to approach strong coupling
Wan-Ping Chan;Jyun-Hong Chen;Wei-Lun Chou;Wen-Yuan Chen;Hao-Yu Liu;Hsiao-Ching Hu;Chien-Chung Jeng;Jie-Ren Li;Chi Chen;Shiuan-Yeh Chen

Strong coupling between an atom and a cavity has been utilized for quantum photonic devices. The alignment between an atom and a cavity needs atom trapping and high vacuum equipment, which are hardly to be integrated into a microchip. Here, DNA strands are used to connect a gold nanoparticle and a gold film to construct a nanocavity and simultaneously integrate a few fluorophores to form a strong coupling unit. This method produces high cavity yield and strong coupling yield. Combination of this method with e-beam lithography can further position strong coupling units on a specific location of a microchip.


  Preview abstract
 
16:30 - 16:45
Manuscript ID.  0329
Paper No.  2021-THU-S0302-O004
Te-Hua Liu The Influence of Mode Changes of High-Power DFB Laser on Bandwidth Under Various Temperature Condition
Te-Hua Liu;Chieh Lo;Hao-Tien Cheng;Yun-Cheng Yang;Chao-Hsin Wu

We fabricated a high-power distributed feedback (DFB) laser. In the experiment, the measured temperature and the injected current are changed, we observed the difference in the frequency spectrum. In the microwave measurement, it is found that the switching between DFB mode and FP mode will affect the oscillation frequency.

 
 
16:45 - 17:00
Manuscript ID.  0119
Paper No.  2021-THU-S0302-O005
Zhi-Kuang Lu High Power High Speed 940 nm Flip-Chip VCSEL Array with Narrow Divergence Angle Micro-Lens for LiDAR
Zhi-Kuang Lu;Hao-Chung Kuo;Hsin Chiang;Dong Yang;Min-Hsiung Shih

In this study, we design the structure of flip-chip tunnel junction VCSEL to improve speed, output power and conversion efficiency for medium and long-distance sensing. Through the design of flip-chip structure and tunnel junction, the PCE can improve to 57.8%.