Session Index

Quantum Electronics and Laser Technology

Quantum Electronics and Laser Technology IV
Friday, Dec. 3, 2021  13:00-14:30
Presider: Prof. Sheng-Kwang Hwang (黃勝廣)/Prof. Jui-Yang Feng (馮瑞陽)
Room: 303a
13:00 - 13:30
Manuscript ID.  0724
Paper No.  2021-FRI-S0304-I001
Invited Speaker:
Tien-Chang Lu
Progress of active control of surface plasmon polariton nanolasers on graphene-insulator-metal platform
Tien-Chang Lu

13:30 - 13:45
Manuscript ID.  0008
Paper No.  2021-FRI-S0304-O001
Yun-Cheng Yang Signal Processing Free 25-50 Gbps Oxide-Confined Vertical-Cavity Surface-Emitting Laser
Yun-Cheng Yang;Hao-Tien Cheng;Chao-Hsin Wu

This letter presents the static and microwave characteristics, 100 GBase-SR4 eye mask margins, and eye diagrams of volume manufacturable 850-nm oxide confined VCSELs with 7 μm diameter oxide aperture. The VCSELs with high dynamics performance design enable high-quality eye diagrams with 25.781 Gbps on-off-keying (OOK) and 28 Gbaud 4-level pulse amplitude modulation (PAM-4) at room temperature and 75 °C without pre-emphasis, digital signal processing, and any equalization.

13:45 - 14:00
Manuscript ID.  0472
Paper No.  2021-FRI-S0304-O002
Qun-Lin Zheng A 10/20 GHz All-PM Figure-9 Hybrid Mode-locked Er-Fiber Laser with Nonreciprocal Phase Shifter
Qun-Lin Zheng;Yi-Jang Hsu;Yinchieh Lai

We have successfully demonstrated a 10/20 GHz all-PM Figure-9 hybrid mode-locked Er-doped fiber
laser. With the help of a nonreciprocal phase shifter in the fiber loop, stable mode-locked pulse trains are
obtained under the high repetition rates and the pulse-width can be as short as 1.7 ps.

14:00 - 14:15
Manuscript ID.  0579
Paper No.  2021-FRI-S0304-O003
Yun-Hsiu Cheng Electro-optical Numerical Modeling for the Design of High Power Ridged Semiconductor Laser Diodes
Yun-Hsiu Cheng;YUH-RENN WU

This study uses the 2D electro-optical numerical model developed by our laboratory to analyze the electrical characteristics and optical field distribution for different designs of ridged semiconductor laser diodes. By changing the design of the structure beside the ridge, the difference of model gain properties are discussed.