Session Index

Mie scattering and three-dimensional finite-difference time-domain (3D-FDTD) are used to simulate the electromagnetic fields inside and around particles of granular material and to investigate their thermal radiation absorption effects. A comprehensive study of the mass absorption cross-section thermal radiation hindering effect of the main particulate matter is presented.

 

Inverted staggered bottom-gate p-type SnO TFTs were fabricated on glass substrates. The contact resistance and transport mechanism were investigated by the transmission line method (TLM) and temperature-dependent I-V measurement. Gate voltage (VGS)-dependent contact resistances and Arrhenius temperature-dependent drain currents were observed in the ON state, indicating that the hole transport mechanism in SnO TFTs was dominated by the “trap-limit band conduction.”

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The subwavelength VO2 nanocone array could yield the ultrahigh Tlum due to the graded refractive index and the excellent ΔTsol resulting from the localized surface plasmon resonance effect. The effects of d/D ratio, height and porosity of nanocone array on thermochromic performances were theoretically investigated. The single-layered VO2 nanocone array exhibits the ultrahigh Tlum of 93.3% with the excellent ΔTsol of 6.1%, and the remarkable thermochromic performances of ΔTsol = 19% and Tlum = 69.5% could be obtained with the increasing layer number.

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Following similar growth procedures, a second graphene layer can be grown on the graphene/sapphire sample surfaces. A similar D/G peak ratio with the first graphene layer suggests that similar crystallinity may be obtained for the second graphene layer. After fabricating the graphene films into bottom-gate transistors, enhanced field-effect mobility values are observed for the device with two graphene growth cycles. The results indicate that although similar crystallinity is obtained for the second graphene layer, the second graphene growth cycle may help to heal the first graphene layer such that higher field-effect mobility value will be observed for the graphene transistor.

 

The graded-index-like film with shadow-mask was used to design linear variable filter. A program was written to model and simulate the relative thickness of the AlN and SiO2 films influenced by different target-substrate distance. Moreover, optimization of shadow-masks for AlN and SiO2 films to achieve spatial variation in notch‐band center wavelength across the substrate surface.

 

We reported a multi-reflection bands film which is generated by stacking single-pitched photo-polymerized cholesteric liquid crystal films. The reflection bands position can be controlled by changing the ratio of liquid crystals and solvent.

 

EC-treated porous-AlGaN/GaN stack structure has been demonstrated as the photo-detector with multiples 2DEG channels. The PL emission intensity of the EC-PD was higher than the ST-PD at 345nm. The Al content of the AlGaN epitaxial layers in PD structure were analyzed through the photoluminescence measurement. The photo-current of the EC-PD was higher than the non-treated PD structure at 335nm monochromatic light. The EC-PD structure with multiple AlGaN/GaN channels had been demonstrated which have potential for the high efficiency UV detector applications.