Session Index

Polycrystalline-silicon thin-film transistors (poly-Si TFTs) were successfully manufactured with low metal contamination Ni-induced lateral crystallization (LC-NILC) and p-type poly-Si channel. The relative low power consumption and thermal budget with capability of integrating in pixels, going to meet the requirement of idea of system on panel (SoP).

 

In this study, the electrical characteristics of InWZnO based conductive bridge random access memory (CBRAM) with single and bilayer structure under low compliance current (10-5 A) are systematically investigated. However, the endurance test of bilayer IWZO CBRAM device are extracted by cycling I-V curve. The bilayer CBRAM device with insertion layer of TiOx has the best performance for endurance test. Finally, the retention property of bilayer CBRAM device can be maintained the high resistance state and low resistance over 104 s, which paved the potential way for low power applications.

 

Vanadium pentoxide (V2O5) is used as auxiliary color change layer for a complementary ITO/WO3/(LiClO4+PC)+PMMA/V2O5/ITO all-solid-state electrochromic devices. The deposited parameters of V2O5 film include the argon flow is 20 sccm, oxygen flow change from 2 to 8 sccm. However, the transmittance variation (△T) can reach 48.8% @ 500nm.

 

Copper oxide heterojunction photocathodes for photoelectrochemical water splitting were fabricated using the sol-gel thin-film deposition and electrodeposition methods. Bilayered CuO/Cu2O photocathodes exhibit a higher photoactivity than CuO and Cu2O due to excellent electron-hole separation and a faster charge transportation rate.

 

In this work, we process the reactive sputtering deposition for SnO film fabrication, and adjust different ratio of O2/Ar in sputtering process and annealing temperature. 5%-SnO
18 -3 5 2 film reaches carrier concentration of 8.51 x10 cm , and sheet resistance of 1.07 x10 Ω/cm ,
respectively.

 

Nano-structured CuO-based heterojunction photoelectrodes for photoelectrochemical water splitting were fabricated by using the sol-gel thin-film deposition method. Graphitic carbon nitride (g-C3N4) quantum dots and high-entropy ABO3-type perovskite nanoparticles were successfully synthesized for fabricating heterojunction photoelectrodes on CuO.

 

In this study, metal-semiconductor-metal(MSM) deep ultraviolet photodetectors (DUVPDS) based on ZnGa2O4 (ZGO) is fabricated, ZGO thin film is prepared by metal organic chemical vapor deposition (MOCVD).The effect of UV-ozone treatment on the characteristic of DUVPDS is reported. It shows better performance than the device without UV-ozone treatment.

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A feasible and effective post-treatment method is presented to improve the quality of MAPbI3 films by using bulky alkylammonium cations (Phenethylammonium iodide (PEAI) and N-butylammonium iodide (BAI)). To the perovskite LEDs, it enhances the electroluminescence properties, and decreases the turn-on voltage. Ultimately, the electroluminescence intensity of 3.07 uW is achieved with BAI post-treatment. It represents a 38% compared to the best control cell. Moreover, the whole post-treatment process is simple and cheap, which only requires of 1 mg/mL PEAI or BAI solution in isopropanol. It is beneficial to control the reaction rate by changing the volume of the solution.

 

The antireflection coating was prepared by the plasma-assisted reactive magnetron sputtering system and the shadow-mask designed by the simulation program. The specification of the reflectance in 420 nm to 680 nm was less than 1%, and the highest reflectance did not exceed 1.5%. Verify that a large-area uniform film could be obtained through the shadow-mask designed by the simulation program.

 

In this study, the intermittent process is used to enhance the optoelectronic properties of ultra thin Zinc Oxide (ZnO) film, which will be used as transparent conductive electrode to apply on light-emitting diode.

 

In this work, we investigate the performance of methylammonium lead iodide (MAPbI3) based perovskite LEDs with LiQ as Interlayer. We found that inserting an ultrathin Lithium-Quinolate (LiQ) interlayer between the EML and ETL shows enhancement performance of external quantum efficiency (EQE) Compared to the control device without LiQ. LiQ could restrains severe photoluminescence (PL) quenching at the perovskite/ETL interface and effectively block excess electrons. A high optical output power of 856.83 μW and external quantum efficiency of 4.8 % are achieved, which represents a 2.7 times enhancement in the quantum efficiency compared to device without LiQ interlayer.

 

This study is about finding appropriate environment for making ZTO TFTs. We deposited and analyzed the ZTO membrane at first through transmittance, Hall Effect, Micro-PL Spectrometer and XRD. Afterwards, we deposited HFO2 as insulating layer and ZTO as channel layer in different oxygen flow by RF sputtering system. At the top of TFT, we deposited 70nm Al as gate layer. Finally, concluded that when Ar:O2 is 45:5 was the better condition for manufacturing.

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The sol-gel thin-film approach using spin coating was applied to prepare high-performance CuO-based supercapacitor materials. Four different doped CuO thin films with a metal cation (Ni, Co, Fe, or La) were effectively fabricated, boosting the supercapacitor performance compared to CuO.

 

The ZrO2/SiO2 and TiO2/SiO2 multi-layers deposited on PET substrate with ion-assisted E-gun deposition. The optical and residual stress were investigated by spectra and shadow moiré interferometer. However, the residual stress could reduce to -297.3MPa and -132.6MPa.

 

The external electric field can be used to change the refractive index of LiNbO3, thereby forming an optical phased array structure for three-dimensional scanning. With the change of refractive index, the strong light coupled out of the LiNbO3 waveguide has a deflection angle of 2 degrees.

 

In this study, the different sputtering powers is used to deposit ZnO thin, which will be applied on CO gas sensor. The absorption rate and gas sensing sensitivity are measured, the optimal thin film is deposited on 200W power.

 

Development and verification of a high quality silver coating on remote sensing telescope mirrors is demonstrated in this study. The optical coating has been implemented optical spectrum measurement and cross-cut adhesion test. The environmental test, including high temperature & humidity, thermal cycling, and radiation tests are also performed to verify the validation of this component. According to this qualification model (QM) development experience, the manufacturing of a space-qualified flight model (FM) mirror coating is expected for the future missions.

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