Session Index

The Ag3PO4-Na2SiO3 hybrid composites were deposited by spray pyrolysis with different Ag/P atomic ratios in the precursor. The photocatalytic properties of the films and sheet resistance between repeated runs were characterized. The film with Ag/P=3 shows low resistance, high photocatalytic ability and stability. The resistance effects were discussed.

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In this study, the hydrothermal growth method was used to prepare TiO2 for glucose sensor because of its many advantages such as high reactivity, low cost fabrication, low energy requirement, and easy processing. By changing the annealing temperature of TiO2, the best parameters were found to achieve high sensitivity.

 

This study adopts simple, fast, and low-cost ultrasonic spray pyrolysis to fabricate titanium dioxide thin films on silicon substrates, annealing the films at different pressures and gases, observing the crystal structure by X-ray diffraction (XRD), then calculating the degradation efficiency of methylene blue with the spectrometer.Tio₂ thin films were prepared by USP, then annealed in different gases at temperature of 500°C for one hour. The photocatalytic degradation of methylene blue revealed that an annealing time of one hour in vacuum has the best degradation rate and annealing in ammonia has better degradation rate than nitrogen.

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This article presents the effectiveness of optimizing multiple quality characteristics via Taguchi method and BPNN (Back propagation neural network), and has been successfully applied to optimize the PECVD thin film stress to reduce the flake defect. Optimizing process parameters: pressure, gas flow, and RF power to decrease the film stress and keep original level of multi-quality characteristics such as thickness, reflectivity, fluorine content, and uniformity.

 

In this paper, we demonstrated a new material (MgGa2O4) for being RRAM device with Al top electrode, the outstanding characteristics including endurance, retention time, ON/OFF current ratio conducted by series of experiments indicated this this material possessed potential fabricated as switching layers for resistive memory application.

 

In this work, a symmetrical film stack composed of TiN and SiO2 thin films is designed to achieve an edge filter that exhibits high reflection at infrared range and high absorption at visible range. Such filter can be applied as a thermophotovoltaic device.

 

The Pulse Flow Modulation Method (PFM) was used to improve the epitaxial quality of the Hydride Vapor Phase Epitaxy (HVPE), using sapphire substrate with a gallium nitride (GaN) buffer layer grows the β-phase gallium oxide (β-Ga2O3) film.
The best parameters of the gallium oxide epitaxy film are the gallium zone temperature of 600 °C, the deposition zone temperature of 900 °C, the growth pressure of 100 Torr, the HCl flow rate of 0.02 SLM, and the growth time of 180 min.The FWHM is 0.77∘, and the rate of growth was 1.375μm/hr.

 

In this study, the semiconductor ZnO tetrapod nanostructure was favourably used for designing the porous structure and accompany by plasmonic metal Ag nanoparticles to synthesis the hybridization of unique SERS (Surface Enhanced Raman Spectroscopy) chips on the ITO glass substrate (Ag@ZnO-ITO) via simple photo-irradiation induced deposition. This chip shows excellent SERS effect and has a significant signal performance to analyze the pesticide molecular of acetamiprid with very low concentration in water.

 

Hexagonal boron nitride (h-BN), a two-dimensional material, has a similar structure with graphene but including wide bandgap. In this study, h-BN films were grown on silicon substrates by using low-pressure chemical vapor deposition. The quality of the h-BN films is analyzed by controlling the gas flow and process time.

 

The optical properties, thickness, and water contact angle of surface and interface layers between the polyethylene terephthalate (PET) and sputtered Ta2O5 films were investigated with spectrophotometer, spectroscopic ellipsometer, and contact angle measurement system, respectively. The surface of PET had been treated with oxygen plasma.

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The effect of device characteristics of Cu2ZnSnSe4 thin films by using multi-metallic stacked structure is investigated. When the number of the stacked layer changes from 3 to 15, the surface of the film become uniform and full width at half maximum of CZTSe can be reduce from 0.27 to 0.2.

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In this report, we demonstrate high-sensitivity volatile organic gas sensors with nano-scale carbon black as the active material. The conductivity of carbon black changed under oxidizing and reducing gases and thus the sensitivity of the sensor changed with the concentration of the gas. The sensitivity of the sensor changed from 0.49% to 7.21% whiled the ethanol concentration changed from 100 ppm to 7000 ppm in room temperature.

 

The visible light absorptance, reflectance, and optical constants of Nb, Mo, and W films were investigated with a spectrophotometer and a spectroscopic ellipsometer, respectively, when the transmittance was controlled at about 3%. The absorption of Nb fim was the largest due to the smallest reflectance of the film.

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The transparent conducting oxide indium tin oxide (ITO) and ZnO:In hybrid composites were deposited on ITO by spray pyrolysis with controlled deposition time. With optical and electrical study, samples with high transmittance and low sheet resistance were achieved for films deposited with different deposition time. The origins were discussed.

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In this study, we first use electron beam evaporation to deposit a molybdenum film on a sapphire substrate, and use the direct vulcanization method to grow a single-layer molybdenum disulfide film in a high-temperature furnace tube. This research result can be a reference for growing molybdenum disulfide in a large area. We hope that this structure can be applied to various heterojunctions, sensors, solar cells, and thin-film transistors.

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In this study, PLD (Pulsed Laser Deposition) was used to prepare CuO film on a C-plane sapphire substrate. Its crystal structure and thin film properties were analyzed by X-ray diffractometer, Ultraviolet-visible spectroscopy. We study the effects of changing the copper oxide film, substrate temperature, background pressure, and gas flow during casting on the characteristics of the copper oxide photocatalyst film. Then put the sample into the methylene solution for degradation experiment, and use ultraviolet spectrophotometry to measure the degraded methylene blue solution to analyze its photocatalyst effect.

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In this paper, PLD (pulsed laser deposition) was used to prepare copper oxide nickle-doped film on C-face sapphire. Its crystal structure and thin film properties were analyzed by X-ray diffractometer, penetrating spectrometer and Hall measurement. By comparing the thickness of copper oxide grown under different doping concentrations, different environmental pressures and different temperature conditions, the most suitable concentration, the best environmental pressure and the most suitable temperature are selected in sequence.

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Indium oxide film was deposited by atomic layer deposition (ALD) in this study. Saturation curve of indium oxide is measured with the dosage of Trimethylindium (TMI) from 0.1 to 1 s. Growth rates of indium oxide measured by ellipsometer are 0.53 Å / cycle at 150 oC and 0.47 Å / cycle at 250 oC, respectively. The surface roughness of indium oxide is 1.924 nm measured by AFM. Indium oxide film with good thickness control and good conformality and thus its optical and electrical properties can be controlled.

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