Session Index

Thin-Film Technology & Coating Design

Poster Session II
Saturday, Dec. 4, 2021  09:30-11:30
Presider: 陳昇暉(NCU)
Room: Corridor

Manuscript ID.  0176
Paper No.  2021-SAT-P1002-P001
Yong-Yu Chen Resistance Study of Ag3PO4-Na2SiO3 Hybrid Photocatalyst to the Degradation of MB under Visible Light
Yong-Yu Chen;Jui-Yang Feng;Ming-Chang Shih;Hsin-Hui Kuo;Wen-How Lan

The Ag3PO4-Na2SiO3 hybrid composites were deposited by spray pyrolysis with different Ag/P atomic ratios in the precursor. The photocatalytic properties of the films and sheet resistance between repeated runs were characterized. The film with Ag/P=3 shows low resistance, high photocatalytic ability and stability. The resistance effects were discussed.

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Manuscript ID.  0667
Paper No.  2021-SAT-P1002-P002
An-Kai Shih TiO2 Nanostructures for Glucose Sensor Fabricated by Hydrothermal Growth Method
An-Kai Shih;Jhih-Yuan Jhu;Feng-Jui Hsu;Chih-Chiang Yang;Yan-Kuin Su

In this study, the hydrothermal growth method was used to prepare TiO2 for glucose sensor because of its many advantages such as high reactivity, low cost fabrication, low energy requirement, and easy processing. By changing the annealing temperature of TiO2, the best parameters were found to achieve high sensitivity.


Manuscript ID.  0084
Paper No.  2021-SAT-P1002-P003
yu chang chen The Effects of Post-Annealing Treatment on Photocatalytic Activity of Spray Pyrolysis Deposited TiO2 Thin Films
yu chang chen;yao te wang

This study adopts simple, fast, and low-cost ultrasonic spray pyrolysis to fabricate titanium dioxide thin films on silicon substrates, annealing the films at different pressures and gases, observing the crystal structure by X-ray diffraction (XRD), then calculating the degradation efficiency of methylene blue with the spectrometer.Tio₂ thin films were prepared by USP, then annealed in different gases at temperature of 500°C for one hour. The photocatalytic degradation of methylene blue revealed that an annealing time of one hour in vacuum has the best degradation rate and annealing in ammonia has better degradation rate than nitrogen.

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Manuscript ID.  0204
Paper No.  2021-SAT-P1002-P004
ChiAn Wang Process improvement with multiple quality characteristics via Taguchi methods and BPNN
ChiAn Wang;KuoPing Chen

This article presents the effectiveness of optimizing multiple quality characteristics via Taguchi method and BPNN (Back propagation neural network), and has been successfully applied to optimize the PECVD thin film stress to reduce the flake defect. Optimizing process parameters: pressure, gas flow, and RF power to decrease the film stress and keep original level of multi-quality characteristics such as thickness, reflectivity, fluorine content, and uniformity.


Manuscript ID.  0344
Paper No.  2021-SAT-P1002-P005
Sheng-Po Chang Investigation of MgGa2O4 Fabricated as Switching Layer of Resistive Random Access Memory
Yu-Neng Kao;Wei-Lun Huang;Sheng-Po Chang;Wei-Chih Lai;Shoou-Jinn Chang

In this paper, we demonstrated a new material (MgGa2O4) for being RRAM device with Al top electrode, the outstanding characteristics including endurance, retention time, ON/OFF current ratio conducted by series of experiments indicated this this material possessed potential fabricated as switching layers for resistive memory application.


Manuscript ID.  0596
Paper No.  2021-SAT-P1002-P006
Ting-Yen Lin Design a TiN-SiO2 symmetrical film stack for thermophotovoltaic application
Yi-Jun Jen;Ting-Yen Lin

In this work, a symmetrical film stack composed of TiN and SiO2 thin films is designed to achieve an edge filter that exhibits high reflection at infrared range and high absorption at visible range. Such filter can be applied as a thermophotovoltaic device.


Manuscript ID.  0209
Paper No.  2021-SAT-P1002-P007
En-Wei Ni Research on Improving Epitaxial Growth of Gallium Oxide by Hydride Vapor Phase Epitaxy by Pulse Flow Modulation Method
En-Wei Ni

The Pulse Flow Modulation Method (PFM) was used to improve the epitaxial quality of the Hydride Vapor Phase Epitaxy (HVPE), using sapphire substrate with a gallium nitride (GaN) buffer layer grows the β-phase gallium oxide (β-Ga2O3) film.
The best parameters of the gallium oxide epitaxy film are the gallium zone temperature of 600 °C, the deposition zone temperature of 900 °C, the growth pressure of 100 Torr, the HCl flow rate of 0.02 SLM, and the growth time of 180 min.The FWHM is 0.77∘, and the rate of growth was 1.375μm/hr.


Manuscript ID.  0574
Paper No.  2021-SAT-P1002-P008
Sripansuang Tangsuwanjinda Silver Decorated Zinc Oxide Nanostructure as a Surface-Enhanced Raman Scattering (SERS) Chip for Acetamiprid Detection
Sripansuang Tangsuwanjinda;Tsung-Yi Su;Zhe-Zheng Su;Ren-Hao Ko;Zhi-Xuan Tsai;Hsin-Ming Cheng

In this study, the semiconductor ZnO tetrapod nanostructure was favourably used for designing the porous structure and accompany by plasmonic metal Ag nanoparticles to synthesis the hybridization of unique SERS (Surface Enhanced Raman Spectroscopy) chips on the ITO glass substrate (Ag@ZnO-ITO) via simple photo-irradiation induced deposition. This chip shows excellent SERS effect and has a significant signal performance to analyze the pesticide molecular of acetamiprid with very low concentration in water.


Manuscript ID.  0659
Paper No.  2021-SAT-P1002-P009
Zhong-Jun Jiang Growth of Hexagonal Boron Nitride on Silicon substrate by Low-Pressure Chemical Vapor Deposition
Zhong-Jun Jiang;Jen-Hao Wei;Sheng-Hui Chen

Hexagonal boron nitride (h-BN), a two-dimensional material, has a similar structure with graphene but including wide bandgap. In this study, h-BN films were grown on silicon substrates by using low-pressure chemical vapor deposition. The quality of the h-BN films is analyzed by controlling the gas flow and process time.


Manuscript ID.  0504
Paper No.  2021-SAT-P1002-P010
Cheng-Chung Jaing Surface and Interface Layers between Polyethylene Terephthalate and Ta2O5 Film by Surface Pretreatment Using Oxygen Plasma
Ching-Wei Chi;Lin-Chun Huang;Chen-Chi Huang;Cheng-Chung Jaing;Bing-Mau Chen;Yih-Shing Lee

The optical properties, thickness, and water contact angle of surface and interface layers between the polyethylene terephthalate (PET) and sputtered Ta2O5 films were investigated with spectrophotometer, spectroscopic ellipsometer, and contact angle measurement system, respectively. The surface of PET had been treated with oxygen plasma.

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Manuscript ID.  0172
Paper No.  2021-SAT-P1002-P011
Pang-Liang Liu Characterization of Cu2ZnSnSe4 Thin Films with Multi-Metallic Stacked Structure
Pang-Liang Liu;Shou-Yi Kuo;Fang-I Lai;Jui-Fu Yang

The effect of device characteristics of Cu2ZnSnSe4 thin films by using multi-metallic stacked structure is investigated. When the number of the stacked layer changes from 3 to 15, the surface of the film become uniform and full width at half maximum of CZTSe can be reduce from 0.27 to 0.2.

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Manuscript ID.  0459
Paper No.  2021-SAT-P1002-P012
Chien-Shun Liang Application of Carbon Nanomaterials in Volatile Organic Gas Sensing
Chi-Feng Lin;Chien-Shun Liang;Chin-Chung Chen;Yu-Hsuan Ho

In this report, we demonstrate high-sensitivity volatile organic gas sensors with nano-scale carbon black as the active material. The conductivity of carbon black changed under oxidizing and reducing gases and thus the sensitivity of the sensor changed with the concentration of the gas. The sensitivity of the sensor changed from 0.49% to 7.21% whiled the ethanol concentration changed from 100 ppm to 7000 ppm in room temperature.


Manuscript ID.  0507
Paper No.  2021-SAT-P1002-P013
Cheng-Chung Jaing Visible Light Absorption for Thin Films of Nb, Mo, and W
Jui-Hung Wang;Chao-Te Lee;Jen-Hao Wen;Cheng-Chung Jaing;Bing-Mau Chen;Yih-Shing Lee

The visible light absorptance, reflectance, and optical constants of Nb, Mo, and W films were investigated with a spectrophotometer and a spectroscopic ellipsometer, respectively, when the transmittance was controlled at about 3%. The absorption of Nb fim was the largest due to the smallest reflectance of the film.

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Manuscript ID.  0156
Paper No.  2021-SAT-P1002-P014
Shih-Wei Ying Study of ITO-ZnO:In Hybrid on ITO by Spray Pyrolysis
Shih-Wei Ying;Ming-Chang Shih;Mu-Chun Wang;Wen-How Lan

The transparent conducting oxide indium tin oxide (ITO) and ZnO:In hybrid composites were deposited on ITO by spray pyrolysis with controlled deposition time. With optical and electrical study, samples with high transmittance and low sheet resistance were achieved for films deposited with different deposition time. The origins were discussed.

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Manuscript ID.  0394
Paper No.  2021-SAT-P1002-P015
Bing-Hsuan Liang A single layer of large-area molybdenum disulfide is grown by direct vulcanization
Bing-Hsuan Liang;Kuan-Fu Lin;Vladimir E Fedorov;Hsiang-Chen Wang

In this study, we first use electron beam evaporation to deposit a molybdenum film on a sapphire substrate, and use the direct vulcanization method to grow a single-layer molybdenum disulfide film in a high-temperature furnace tube. This research result can be a reference for growing molybdenum disulfide in a large area. We hope that this structure can be applied to various heterojunctions, sensors, solar cells, and thin-film transistors.

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Manuscript ID.  0717
Paper No.  2021-SAT-P1002-P016
Chia-Cheng Yu Photocatalytic Performance of CuO Thin Films by Pulsed Laser Deposition
Wen-Kuan Hung;Jia-Jin Ye;Kai-Yu Liu;Chia-Cheng Yu

In this study, PLD (Pulsed Laser Deposition) was used to prepare CuO film on a C-plane sapphire substrate. Its crystal structure and thin film properties were analyzed by X-ray diffractometer, Ultraviolet-visible spectroscopy. We study the effects of changing the copper oxide film, substrate temperature, background pressure, and gas flow during casting on the characteristics of the copper oxide photocatalyst film. Then put the sample into the methylene solution for degradation experiment, and use ultraviolet spectrophotometry to measure the degraded methylene blue solution to analyze its photocatalyst effect.

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Manuscript ID.  0718
Paper No.  2021-SAT-P1002-P017
Yi-Sheng Yang Properties of Ni doped CuO conducting Thin Films Prepared by Pulse Laser Deposition
Yi-Sheng Yang;Chih-Yi Chen;Wei-Kuan Hung;Pei-Yu Tsai

In this paper, PLD (pulsed laser deposition) was used to prepare copper oxide nickle-doped film on C-face sapphire. Its crystal structure and thin film properties were analyzed by X-ray diffractometer, penetrating spectrometer and Hall measurement. By comparing the thickness of copper oxide grown under different doping concentrations, different environmental pressures and different temperature conditions, the most suitable concentration, the best environmental pressure and the most suitable temperature are selected in sequence.

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Manuscript ID.  0123
Paper No.  2021-SAT-P1002-P018
Tsung-Te Chou Saturation curves of indium oxide deposited by atomic layer deposition
Tsung-Te Chou;Chan-Yuen Chang;Chi-Chung Kei

Indium oxide film was deposited by atomic layer deposition (ALD) in this study. Saturation curve of indium oxide is measured with the dosage of Trimethylindium (TMI) from 0.1 to 1 s. Growth rates of indium oxide measured by ellipsometer are 0.53 Å / cycle at 150 oC and 0.47 Å / cycle at 250 oC, respectively. The surface roughness of indium oxide is 1.924 nm measured by AFM. Indium oxide film with good thickness control and good conformality and thus its optical and electrical properties can be controlled.

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